| 摘要 |
FIELD: semiconductor industry, in particular, integration microchips, possible use mainly for protecting inputs and outputs of high frequency metal-oxide semiconductor microchips from electrostatic discharges. ^ SUBSTANCE: the device contains key (p-channel) transistor (1) and key (n-channel) transistor (2), which provide passage of discharge current of large value, controlling symmetric (p-channel) transistor (3) and controlling symmetric (n-channel) transistor (4), which in turn ensure division of current on two equal (identical) components, and also load resistors (5) and (6). Sources of transistors (1) and (2) are connected to each other and to input bus (7) (being the common bus), and their drains are connected to power bus (8) and ground bus (9) respectively. Gate of transistor (1) and drain of transistor (4) through resistor (5) are connected to bus (8), and gate of transistor (2) and source of transistor (3) through resistor (6) are connected to bus (9). Gate of transistor (4) is connected to bus (9) and its drain - to input bus (6), and gate of transistor (3) is connected to bus (8) and its drain - to input bus (7). On appearance of electrostatic charge on input bus (7), passage of discharge current is ensured along transistors (1) and (2) simultaneously, resulting in twice lesser resistance discharge current circuit and making it possible to use less powerful key transistors in protection device. ^ EFFECT: increased efficiency. ^ 2 dwg |
