| 摘要 |
A vertical plasma processing apparatus and a method for a semiconductor process are provided to improve the planar uniformity and/or inter-substrate uniformity of a plasma process on a wafer. A vertical plasma processing apparatus for a semiconductor process includes a film forming apparatus(2). The film formation apparatus(2) has a process field configured to be selectively supplied with a first process gas containing DCS(dichlorosilane) gas as a silane family gas, a second process gas containing ammonia(NH3) gas as a nitriding gas, and a purge gas comprising an inactive gas, such as N2 gas. The film formation apparatus is configured to form a silicon nitride film on target substrates by CVD in the process field.
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