| 摘要 |
A method of manufacturing a semiconductor memory device having an increased sensing margin is provided to decrease a parasitic capacitance by forming a bit line spacer film using a hexagonal boron nitride(h-BN) with a low dielectric constant. An interlayer dielectric(110) is formed on a semiconductor substrate(100). A bit line stack(120) is formed on the interlayer dielectric. A landing plug contact is arranged in the interlayer dielectric to couple an impurity region with the bit line stack. A bit line spacer film(130) is formed on the sidewall of the bit line stack. An insulation film is formed in front of the bit line spacer film and a blanket etching is performed to form the bit line spacer film. A hexagonal boron nitride is deposited on the insulation film with a thickness between 130 and 150Å. A B3N3H6 gas is used as a source gas at a chamber pressure around 10^-4Pa.
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