| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the chip area of a Schottky barrier diode grows large, where the Schottky diode has a JBS structure in which PN junctions are arranged in parallel at a Schottky junction to improve a breakdown voltage. SOLUTION: A second N-type semiconductor region comprising an epitaxial layer is formed on a first N<SP>+</SP>-type semiconductor region 7. A third N<SP>+</SP>-type semiconductor region 9 is provided, where the third N<SP>+</SP>-semiconductor region has a plurality of island-like sections 9' in a sectional shape. A fourth P<SP>+</SP>- semiconductor region 10 having a small area is provided among the island-like sections 9' of the third semiconductor region 9. An anode electrode 2 is provided, where the anode electrode 2 is subjected to Schottky contact to the third semiconductor region 9, and is subjected to low-resistance contact to the fourth semiconductor region. COPYRIGHT: (C)2003,JPO |
