| 摘要 |
An electronic device containing a novel p-type semiconductor material, and a thin film transistor(TFT) containing a novel p-type semiconductor material are provided to increase the current on/off ratio by increasing the resistance against oxygen. An electronic device comprises a semiconductor material selected from the group consisting of a semiconductor material represented by the formula I, a semiconductor material represented by the formula II and their mixture, wherein R1 to R10 are independently H, an alkyl group, an aryl group, an alkoxy group, a halogen atom, an arylalkyl group, a cyano group or a nitro group, but R1 and R2 are not a halogen atom, a nitro group or a cyano group; a and b represent the number of rings; and n is the number of the repeated group or residue.
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