| 摘要 |
<p>A solid state imaging device comprises a semiconductor substrate defining a two-dimensional surface, a plurality of photoelectric conversion elements disposed in a light receiving area of said semiconductor substrate in a plurality of rows and columns, an electric charge read-out device that reads out signal electric charges accumulated in said plurality of photoelectric conversion elements in interlace by dividing the signal electric charges in a plurality of fields, each field at least including the signal electric charges accumulated in the vertically adjacent photoelectric conversion elements corresponding to one color, and a vertical adding device that adds, for each field, the read-out signal electric charges divided into the plurality of fields. A solid state imaging device that can increase vertical resolution at a time of an interlace operation is provided.
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