| 摘要 |
<p>A method for manufacturing a high voltage transistor in a semiconductor device is provided to program and eliminate electrons in a short period of time by improving a breakdown voltage as more current can be trapped to a floating gate rapidly. A method for manufacturing a high voltage transistor in a semiconductor device includes the steps of: forming a first trench for forming a device isolation film; forming a second trench between a contact and the first trench; forming an insulating film on the upper structure to fill the first and the second trenches; forming a device isolation film(102) and an insulating film(104) for isolation; forming a gate oxidation film and a first conductive film on the semiconductor substrate formed with the device isolation film(102) and the insulating film(104) for isolation; and forming gate by etching the gate oxide film and the first conductive film.</p> |
