发明名称 |
METHOD AND APPARATUS FOR PERFORMING DARK FIELD DOUBLE DIPOLE LITHOGRAPHY(DDL) |
摘要 |
<p>A method and an apparatus for performing a dark field double dipole lithography process are provided to improve the accuracy of modeled OPC(Optical Proximity Compensation) results by adopting a quasi-rigorous approach such as a boundary layer method. A target pattern having plural features containing horizontal and vertical features is recognized. A horizontal mask containing low-contrast features is generated based on the target pattern. A bias of the low-contrast pattern in the horizontal mask is optimized. Scatter bars are applied on the horizontal mask. A vertical mask containing low-contrast features is generated based on the target pattern. A bias of the low-contrast pattern in the vertical mask is optimized. Scatter bars are applied on the vertical mask.</p> |
申请公布号 |
KR20070100182(A) |
申请公布日期 |
2007.10.10 |
申请号 |
KR20070034402 |
申请日期 |
2007.04.06 |
申请人 |
ASML MASKTOOLS B.V. |
发明人 |
HSU DUAN FU STEPHEN;PARK, SANG BONG;VAN DEN BROEKE DOUGLAS;CHEN JANG FUNG |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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