发明名称 METHOD AND APPARATUS FOR PERFORMING DARK FIELD DOUBLE DIPOLE LITHOGRAPHY(DDL)
摘要 <p>A method and an apparatus for performing a dark field double dipole lithography process are provided to improve the accuracy of modeled OPC(Optical Proximity Compensation) results by adopting a quasi-rigorous approach such as a boundary layer method. A target pattern having plural features containing horizontal and vertical features is recognized. A horizontal mask containing low-contrast features is generated based on the target pattern. A bias of the low-contrast pattern in the horizontal mask is optimized. Scatter bars are applied on the horizontal mask. A vertical mask containing low-contrast features is generated based on the target pattern. A bias of the low-contrast pattern in the vertical mask is optimized. Scatter bars are applied on the vertical mask.</p>
申请公布号 KR20070100182(A) 申请公布日期 2007.10.10
申请号 KR20070034402 申请日期 2007.04.06
申请人 ASML MASKTOOLS B.V. 发明人 HSU DUAN FU STEPHEN;PARK, SANG BONG;VAN DEN BROEKE DOUGLAS;CHEN JANG FUNG
分类号 H01L21/027 主分类号 H01L21/027
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