| 摘要 |
<p>A flash memory device and a manufacturing method thereof are provided to fundamentally prevent the generation of a peripheral circuit parasitic PMOS transistor by preventing the extension of a control gate to a peripheral circuit region. A flash memory device includes a semiconductor substrate(101), a tunnel oxide film(105), a floating gate(106), a dielectric film(107), and a control gate(108). The semiconductor substrate(101) has a cell region(A) and a peripheral circuit region(B). The tunnel oxide film(105) and the floating gate(106) are formed on the upper part of the semiconductor substrate(101) of the cell region(A). The dielectric film(107) and the control gate(108) are formed orthogonal to the floating gate(106) and a device isolation film(104), and are formed on the upper part of the semiconductor substrate(101) of the cell area(A) not to deviate from the cell region(A). The semiconductor substrate(101) includes an N well(102) which is formed in a predetermined region, and a P well(103) which is formed in a predetermined region of the N well(102).</p> |
