Method of manufacturing a Silicon-based thin-film-photoelectric conversion device

摘要

An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer (9), an i-type microcrystalline silicon-based photoelectric conversion layer (8) and an n-type semiconductor layer (7) deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer (9), the i-type microcrystalline silicon-based photoelectric conversion layer (8) and the n-type semiconductor layer (7) on a substrate within the same plasma CVD film deposition chamber (S4); transferring the substrate out of the film deposition chamber (S5); and subsequently to the step of depositing the p-type semiconductor layer (9), the i-type microcrystalline silicon-based photoelectric conversion layer (8) and the n-type semiconductor layer (7), eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.