发明名称 Method of providing doping concentration based on diffusion, surface oxidation and etch-back steps, and method of producing solar cells
摘要 A method and system for providing a predetermined doping concentration at a surface of a semiconductor substrate, comprising applying a dopant material to said surface and performing a diffusion step for providing a predetermined doping profile from said surface into a body of said semiconductor substrate, and etching back said surface by performing an oxidization of said surface for generating an oxide thereon, and etching off said oxide, wherein said oxidization is a chemical oxidization that leaves said doping profile in an unoxidized part of said semiconductor substrate unaltered. Further a method for producing solar cells, comprising an emitter generating step that comprises the method of providing a predetermined doping concentration for adjusting the dopant concentration at the surface of the emitter.
申请公布号 EP1843389(A1) 申请公布日期 2007.10.10
申请号 EP20060112217 申请日期 2006.04.04
申请人 SOLARWORLD INDUSTRIES DEUTSCHLAND GMBH 发明人 TOELLE, RAINER
分类号 H01L21/223;H01L21/225;H01L27/142;H01L31/04;H01L31/18 主分类号 H01L21/223
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