| 摘要 |
A method for programming a flash memory device is provided to improve reliability of the device by adjusting threshold voltage distribution of a cell connected the last word line as narrow. According to a method for programming a flash memory device, program(S10) and program verify(S20) are performed to the whole memory cell in sequence. Re-program(S40) is performed to a cell connected to a last word line. The program is performed by applying a program voltage to the word line connected to a selected cell and applying a pass voltage to a word line connected to an unselected cell. The program verify is performed by applying a verify voltage to a word line connected to the selected cell and applying a power supply voltage to a word line not connected to the selected cell. The verify voltage is lower than the power supply voltage.
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