PLASMA PROCESSING APPARATUS

摘要

A plasma processing device is provided to increase the uniformity of a process by controlling the density of plasma to improve a yield. A plasma processing device includes a reaction chamber(100), an antenna(116), and a shower head(112) and a lower electrode(114). The reaction chamber(100) maintains airtight seal of a substrate processing region and is safety-grounded. A high-frequency transmitting window(120) is formed on a part of an upper side wall of the reaction chamber(100). The antenna(116) is formed on an outer circumferential surface of the reaction chamber(100). The antenna includes a slope of which upper portion is inclined inwardly to the reaction chamber(100). The shower head(112) and the lower electrode(114) are opposed to each other.