发明名称 |
Manufacturing process for high voltage semiconductor device |
摘要 |
The method comprises forming a trench in the termination region, the trench extending from the first main surface toward the heavily doped region of the substrate. The trench in the termination region is filled with an oxide material. Columns of the first conductivity type and the second conductivity type are formed in the active region. |
申请公布号 |
EP1842236(A2) |
申请公布日期 |
2007.10.10 |
申请号 |
EP20050855642 |
申请日期 |
2005.12.27 |
申请人 |
THIRD DIMENSION (3D) SEMICONDUCTOR, INC. |
发明人 |
HSHIEH, FWU-IUAN;PRATT, BRIAN, D. |
分类号 |
H01L21/336;H01L29/06;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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