| 摘要 |
A method foe forming metal interlayer dielectric in a semiconductor device is provided to prevent an abnormal layer from being formed between metal interconnections by forming a buffer oxide layer and an interlayer dielectric on the entire surface of a substrate. A metal layer for a metal interconnection(101) is deposited on a semiconductor substrate(100), and then is patterned to form the metal interconnection. A buffer layer is formed on the entire surface of the substrate comprising the metal interconnection to prevent damage of the metal interconnection due to plasma generated when an interlayer dielectric(104) is formed. The interlayer dielectric is formed on the entire surface of the substrate comprising the buffer layer. The buffer layer is made of oxide, and the metal layer is made of tungsten.
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