发明名称 ETCHANT COMPOSITION FOR POLISHING SEMICONDUCTOR WAFER, METHOD FOR PRODUCING POLISHING COMPOSITION USING THE SAME AND POLISHING PROCESSING METHOD
摘要 An etchant composition for polishing a semiconductor wafer, a method for preparing the etchant composition, and a method for polishing a semiconductor wafer by using the composition are provided to suppress the generation of particle, to obtain satisfactory surface smoothness and to improve polishing velocity. An etchant composition is an aqueous solution having the buffer solution composition comprising a weak acid and a quaternary ammonium, wherein the weak acid has pKa of 8.0-12.5 at 25 deg.C and the aqueous solution shows a buffer action at a pH range of 9.5-12 when diluted to 100 times. Also the etchant composition is an aqueous solution having the buffer solution composition comprising a weak acid, a quaternary ammonium and potassium wherein the weak acid has pKa of 8.0-12.5 at 25 deg.C and the aqueous solution shows a buffer action at a pH range of 9.5-12 when diluted to 100 times.
申请公布号 KR20070100122(A) 申请公布日期 2007.10.10
申请号 KR20070032859 申请日期 2007.04.03
申请人 NIPPON CHEMICAL INDUSTRIAL CO., LTD.;SPEEDFAM CO., LTD. 发明人 MAEJIMA KUNIAKI;MIYABE SHINSUKE;IZUMI MASAHIRO;TANAKA HIROAKI
分类号 C09K13/00;B24B37/00;C09K3/14;H01L21/304 主分类号 C09K13/00
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