发明名称 |
Field effect transistor with enhanced insulator structure |
摘要 |
A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the interface of the III-nitride materials permits high current conduction with low ON resistance, and is controllable through the manipulation of spontaneous polarization fields obtained according to the characteristics of the III-nitride material. The field effect transistor produced can be made to be a nominally on device where the in-plane lattice constants of the material forming the interface match. A nominally off device may be produced where one of the material layers has an in-plane lattice constant that is larger than that of the other layer material. The layer materials are preferably InAlGaN/GaN layers that are particularly tailored to the characteristics of the present invention.
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申请公布号 |
US7279697(B2) |
申请公布日期 |
2007.10.09 |
申请号 |
US20040004187 |
申请日期 |
2004.12.03 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BEACH ROBERT |
分类号 |
H01L29/06;H01L29/12;H01L29/20;H01L29/778;H01L31/0328;H01L31/0336;H01L31/072 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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