| 摘要 |
<p>A method for aligning and exposing a substrate comprising alignment marks used to align the following exposure layers of a substrate is provided to improve the precision of alignment in lithography. A method for aligning and exposing a substrate comprises the steps of calculating the difference between the real alignment mark data and the default alignment mark data; calculating the alignment correction based on the calculated difference; applying the alignment correction to the substrate; and exposing the substrate. Preferably the default alignment mark data comprise the mathematical model of shape and position of the exposed substrate.</p> |
