| 摘要 |
<p>A semiconductor device is provided to suppress the reduction of an output current and prevent a leakage current from flowing by improving a drain withstand voltage. A semiconductor device(21) includes a multi-gate structure, and a semiconductor layer(23) as a semiconductor film formed on a substrate(22) made of glass, a gate insulation film(24) covering the semiconductor layer(23), and a first gate electrode(16) and a second gate electrode(17) formed on the gate insulation film(24). The semiconductor device(21) includes an interlayer insulation film(25) covering the first gate electrode(16), the second gate electrode(17), and the gate insulation film(24), a first contact plug(26a) as a first plug, a second contact plug(26b) as a second contact plug, a third contact plug(26c), a fourth contact plug(26d), the first contact plug(26a) through the fourth contact plug(26d) positioned inside a number of contact holes provided to the interlayer insulation film(25), and a first aluminum wiring layer(27a) through a fourth aluminum wiring layer(27d) respectively connected to the first contact plug(26a) through the fourth contact plug(26d).</p> |
