| 摘要 |
A manufacturing method of a group 3 nitride-based flip-flop light emitting device through high-quality ohmic contact layers using selective etching processing is provided to improve electric, optical, and thermal mechanical stability in comparison with a device having a conventional reflective P-type ohmic contact layer. A manufacturing method of a group 3 nitride-based flip-flop light emitting device through high-quality ohmic contact layers using selective etching processing includes the steps of: laminating a single or multi-layered thin film electrode structure including at least one among Au, Ag, Pd, or Pt at the upper part of a p-type nitride-based semiconductor clad layer(140), in a multi-layered light emitting structure which is laminated/grown at the upper layer of an initial growing substrate(100); electrically forming a semi-transparent p-type ohmic contact electrode structure layer by performing heat-treatment on the thin film electrode structure; selectively etching and removing only Au, Ag, Pd, or Pt from the semi-transparent p-type ohmic contact electrode; and depositing/forming a high-reflectance p-type ohmic contact electrode material at the upper layer of a high-transparency p-type ohmic contact electrode structure(160) to stabilize optically, electrically, and thermally.
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