发明名称 Semiconductor integrated circuit device
摘要 An inventive semiconductor integrated circuit device includes: an external connection terminal 1 ; an electrostatic discharge protection circuit 2 ; an output circuit 3 ; an output prebuffer circuit 4 ; an input prebuffer circuit 5 ; an internal circuit 41 ; an inter-power supply electrostatic discharge protection circuit 6 ; and a gate voltage control circuit 7 . The gate voltage control circuit 7 has a capacitor 25 and a resistor 26 , and the inter-power supply electrostatic discharge protection circuit 6 has an NMIS transistor 24 . When a positive surge is applied to the external connection terminal 1 , the gate potential of the NMIS transistor 24 is also increased. Thus, the NMIS transistor 24 is turned on, and the positive electrical charge supplied to the external connection terminal 1 is discharged toward a ground line 23.
申请公布号 US7280328(B2) 申请公布日期 2007.10.09
申请号 US20040827442 申请日期 2004.04.20
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ARAI KATSUYA;KOHGAMI TOSHIHIRO;USAMI SHIRO;YABU HIROAKI
分类号 H01L27/04;H02H9/00;C11D1/34;H01L21/822;H01L23/62;H01L27/02;H02H3/22 主分类号 H01L27/04
代理机构 代理人
主权项
地址