发明名称 |
Semiconductor integrated circuit device |
摘要 |
An inventive semiconductor integrated circuit device includes: an external connection terminal 1 ; an electrostatic discharge protection circuit 2 ; an output circuit 3 ; an output prebuffer circuit 4 ; an input prebuffer circuit 5 ; an internal circuit 41 ; an inter-power supply electrostatic discharge protection circuit 6 ; and a gate voltage control circuit 7 . The gate voltage control circuit 7 has a capacitor 25 and a resistor 26 , and the inter-power supply electrostatic discharge protection circuit 6 has an NMIS transistor 24 . When a positive surge is applied to the external connection terminal 1 , the gate potential of the NMIS transistor 24 is also increased. Thus, the NMIS transistor 24 is turned on, and the positive electrical charge supplied to the external connection terminal 1 is discharged toward a ground line 23.
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申请公布号 |
US7280328(B2) |
申请公布日期 |
2007.10.09 |
申请号 |
US20040827442 |
申请日期 |
2004.04.20 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ARAI KATSUYA;KOHGAMI TOSHIHIRO;USAMI SHIRO;YABU HIROAKI |
分类号 |
H01L27/04;H02H9/00;C11D1/34;H01L21/822;H01L23/62;H01L27/02;H02H3/22 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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