发明名称 Method for manipulating the topography of a film surface
摘要 A method for selectively altering a thickness of a radiation sensitive polymer layer including providing a substrate including at least one radiation sensitive polymer layer having a first thickness topography; exposing the at least one radiation sensitive polymer layer through a mask having a predetermined radiant energy transmittance distribution to selectively expose predetermined areas of the at least one sensitive polymer layer to predetermined radiant energy dosages; and, developing the at least one radiation sensitive polymer layer to alter the first thickness topography of the at least one radiation sensitive polymer layer to produce a second thickness topography.
申请公布号 US7279267(B2) 申请公布日期 2007.10.09
申请号 US20030644356 申请日期 2003.08.19
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 GAU TSAI-SHENG;LIN BURN JENG
分类号 G03F7/26;G03F7/00;G03F7/20;G03F7/40 主分类号 G03F7/26
代理机构 代理人
主权项
地址