发明名称 |
Method for manipulating the topography of a film surface |
摘要 |
A method for selectively altering a thickness of a radiation sensitive polymer layer including providing a substrate including at least one radiation sensitive polymer layer having a first thickness topography; exposing the at least one radiation sensitive polymer layer through a mask having a predetermined radiant energy transmittance distribution to selectively expose predetermined areas of the at least one sensitive polymer layer to predetermined radiant energy dosages; and, developing the at least one radiation sensitive polymer layer to alter the first thickness topography of the at least one radiation sensitive polymer layer to produce a second thickness topography.
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申请公布号 |
US7279267(B2) |
申请公布日期 |
2007.10.09 |
申请号 |
US20030644356 |
申请日期 |
2003.08.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
GAU TSAI-SHENG;LIN BURN JENG |
分类号 |
G03F7/26;G03F7/00;G03F7/20;G03F7/40 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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