发明名称 |
FUNCTIONAL DEVICE AND METHOD FOR FORMING OXIDE MATERIAL |
摘要 |
There have been demands on transparent electrode materials and magnetic materials having a wide range of applications. Disclosed are a novel functional device and a method for forming an oxide material for meeting such demands. Specifically disclosed is a functional device comprising an AlxGayInzN base (wherein 0 <= x <= 1, 0 <= y <= 1, 0 <= z <= 1) and an oxide material composed of a metal oxide which is formed on the Alx GayInzN base. This functional device is characterized in that the metal oxide is TiO2 or the like. In this functional device, a film which hardly reflects at the interface and has both chemical resistance and durability is integrally formed on a group III nitride having excellent physical and chemical properties.
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申请公布号 |
KR20070099591(A) |
申请公布日期 |
2007.10.09 |
申请号 |
KR20077015536 |
申请日期 |
2006.01.06 |
申请人 |
TOYODA GOSEI CO., LTD.;KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY |
发明人 |
HITOSUGI TARO;FURUBAYASHI YUTAKA;HASEGAWA TETSUYA;HIROSE YASUSHI;KASAI JUNPEI;MORIYAMA MIKI |
分类号 |
C23C14/08;C23C14/28;C30B29/16;H01L33/42 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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