| 摘要 |
<p>A method for fabricating a semiconductor device is provided to prevent deterioration of a dielectric film by preventing an attack of a floating gate. A method for fabricating a flash memory device includes the steps of: forming a trench on a semiconductor substrate(10) and forming a element separation film(15); exposing an upper side surface of a pad nitride film(14) by removing a predetermined thickness of the element separation film(15); forming a spacer(16) on a side surface of the exposed pad nitride film(14); etching a predetermined thickness of the element separation film(15) disposed in the cell area by using the pad nitride film(14) and the spacer(16) as a mask; removing the pad nitride film(14) and the spacer(16); and removing the buffer oxidization film(13) and the element separation film(15) disposed on a side surface of the floating gate polysilicon film(12). The semiconductor substrate(10) has a tunnel oxidization film(11), a floating gate polysilicon film(12), a buffer oxidization film(13), and the pad nitride film(14) laminated on a cell area and a peripheral circuit area.</p> |
