发明名称 |
Silicon-based resonant cavity photodiode for image sensors |
摘要 |
An imager with pixels having a resonant-cavity photodiode. The resonant cavity photodiode increases absorption of light having long wavelengths. A trench is formed for the photodiode and reflective film is grown on the bottom of the trench. The reflective film reflects light that is not initially absorbed back to the active region of the photodiode.
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申请公布号 |
US7279764(B2) |
申请公布日期 |
2007.10.09 |
申请号 |
US20040856935 |
申请日期 |
2004.06.01 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MOULI CHANDRA |
分类号 |
H01L31/0288;H01L31/0352;H01L31/0368;H01L31/062 |
主分类号 |
H01L31/0288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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