发明名称 Solid state image pickup device and method of producing solid state image pickup device
摘要 Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
申请公布号 US7279712(B2) 申请公布日期 2007.10.09
申请号 US20040954788 申请日期 2004.09.30
申请人 SONY CORPORATION 发明人 ABE TAKASHI;NAKAMURA NOBUO;MABUCHI KEIJI;UMEDA TOMOYUKI;FUJITA HIROAKI;FUNATSU EIICHI;SATO HIROKI
分类号 H01L29/76;H01L21/027;H01L23/544;H01L27/14;H01L27/146;H01L31/0216;H01L31/0232;H04N5/335;H04N5/369;H04N5/374 主分类号 H01L29/76
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