Semiconductor laser device and manufacturing method thereof

摘要

It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1 , an n-type GaN layer 2 , an n-type AlGaN cladding layer 3 , a n-type GaN guide layer 4 , an InGaN multiple quantum well active layer 5 , an undoped-GaN guide layer 6 , a p-type AlGaN electron overflow suppression layer 7 , a p-type GaN guide layer 8 , a SiO₂ blocking layer 9 , an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11 , and a Ti/Al/Ni/Au electrode 12 . The SiO₂ blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.