发明名称 |
Block contact architectures for nanoscale channel transistors |
摘要 |
A contact architecture for nanoscale channel devices having contact structures coupling to and extending between source or drain regions of a device having a plurality of parallel semiconductor bodies. The contact structures being able to contact parallel semiconductor bodies having sub-lithographic pitch. |
申请公布号 |
US7279375(B2) |
申请公布日期 |
2007.10.09 |
申请号 |
US20050173866 |
申请日期 |
2005.06.30 |
申请人 |
INTEL CORPORATION |
发明人 |
RADOSAVLJEVIC MARKO;MAJUMDAR AMLAN;DOYLE BRIAN S.;KAVALIEROS JACK;DOCZY MARK L.;BRASK JUSTIN K.;SHAH UDAY;DATTA SUMAN;CHAU ROBERT S. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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