发明名称 Method to improve ignition in plasma etching or plasma deposition steps
摘要 In one embodiment, the present invention relates to a method for increasing the ignition reliability of a plasma in a plasma reactor, the method comprising: supplying a source gas to the plasma reactor, the source gas comprising: (a) at least one reactive compound; and (b) at least one ignition gas, wherein the at least one ignition gas increases the ignitability of the source gas as compared to the ignitability of the source gas lacking the at least one ignition gas.
申请公布号 US7279429(B1) 申请公布日期 2007.10.09
申请号 US20040957340 申请日期 2004.10.01
申请人 ADVANCED MICRO DEVICES, INC. 发明人 GABRIEL CALVIN T.;HSIEH TZU-YEN
分类号 H01L21/302 主分类号 H01L21/302
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