发明名称 |
Nonvolatile memory device and methods of fabricating and driving the same |
摘要 |
Nonvolatile memory devices and methods of fabricating and driving the same are disclosed. Disclosed devices and method comprises: growing an oxide layer on a substrate and depositing a nitride layer on the oxide layer; patterning the nitride layer; forming injection gates on the lateral faces of the nitride layer; depositing a first polysilicon, a dielectric layer and a second polysilicon on the surface of the resulting structure, sequentially; patterning the second polysilicon, the dielectric layer and the second polysilicon to form gate electrodes; removing the nitride layer between the injection gates; forming source and drain extension regions around each of the gate electrodes by performing an ion implantation process; forming sidewall spacers on the lateral faces of the gate electrodes; and forming source and drain regions in the substrate by performing an ion implantation process with the sidewall spacers as an ion implantation mask.
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申请公布号 |
US7279736(B2) |
申请公布日期 |
2007.10.09 |
申请号 |
US20040024210 |
申请日期 |
2004.12.27 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
JUNG JIN HYO |
分类号 |
H01L29/788;G11C16/04;H01L21/8247;H01L27/115;H01L29/423 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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