| 摘要 |
A sensor substrate ( 20 ) which includes phototransistors ( 7 ), each having a photosensitive semiconductor layer, and auxiliary capacitances ( 17 ) connected to the drain electrodes D of the corresponding phototransistors ( 7 ), and detecting ICs ( 25 ) for detecting a photoelectric conversion amount of the sensor substrate ( 20 ), which is connected to a source electrode S of the phototransistor ( 7 ), are provided. In the auxiliary capacitance ( 17 ), a predetermined amount of charge is stored, and also stored are the charge as generated by an emission of a light beam onto a photosensitive semiconductor layer in the non-conductive state of the phototransistor ( 7 ). Each detecting IC ( 25 ) detects a photoelectric conversion amount of the sensor substrate ( 20 ) based on the amount of charge remaining in the auxiliary capacitance ( 17 ).
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