| 摘要 |
A method for manufacturing a floating gate of a flash memory cell is provided to simplify manufacturing processes and to reduce the generation of floating gate bridge. A polysilicon layer(16) is deposited on an active region(12) and an isolation layer(14). A photoresist pattern is formed on the polysilicon layer in order to expose selectively the polysilicon layer to the outside. An ARC(Anti-Reflective Coating) is formed along an upper surface of the resultant structure. A spacer is formed on the resultant structure by etching partially the ARC. The exposed polysilicon layer is removed from the resultant structure by using an etching process. Then, the photoresist pattern and the spacer are removed from the resultant structure.
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