PHASE CHANGEABLE DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A phase change memory device and its manufacturing method are provided to increase a driving current without the degradation of integration level by increasing a contact area without the increase of a device size using first and second conductor patterns contacting each other at a sidewall. A phase change memory device includes a first conductor pattern of a first conductive type, a second conductor pattern, a phase change layer and an upper electrode. The first conductor pattern(106s) is formed on a semiconductor substrate. The second conductor pattern(110) is connected with a sidewall of the first conductor pattern. The phase change layer(116) is electrically connected to the second conductor pattern. The upper electrode(118) is connected to the phase change layer. The first conductor pattern is formed like a cylinder structure.