发明名称 |
COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI-REFLECTION COATINGS |
摘要 |
An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture. |
申请公布号 |
KR20070099012(A) |
申请公布日期 |
2007.10.08 |
申请号 |
KR20077017990 |
申请日期 |
2006.01.09 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS INC. |
发明人 |
MINSEK DAVID W.;WANG WEIHUA;BERNHARD DAVID D.;BAUM THOMAS H.;RATH MELISSA K. |
分类号 |
G03F7/30;G03F7/32;G03F7/34 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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