| 摘要 |
A method for forming a gate in a semiconductor device is provided to prevent loss of a metal nitride layer by performing a cleaning process for removing polymer and organic matters using HF and O3 solutions, thereby forming a stable gate pattern. A gate insulating layer(42), a polysilicon layer(43) and a metal layer(46) are formed sequentially as a gate materials on a semiconductor substrate(41). A first etching process is performed on the metal layer and the polysilicon layer partially. A cleaning process is performed to remove polymer and organic matters. An insulating layer(48) for preventing oxidation is formed on the entire surface of the substrate including the etched polysilicon layer and the metal layer. A gate pattern is formed by performing a second etching process on the remaining polysilicon layer and the gate insulating layer. The first cleaning process is processed by using HF solution to prevent loss of the metal layer, and the second cleaning process is processed by using O3 solution to implement the hydrophilicity.
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