发明名称 |
FLASH MEMORY DEVICE AND HIGH VOLTAGE GENERATOR FOR THE SAME |
摘要 |
A flash memory device and a high voltage generator for the same are provided to generate a required high voltage stably, by preventing overshoot due to high transient voltage generated from the high voltage generator efficiently. A charge pump(10) generates a high voltage in response to a pumping clock signal. A voltage divider circuit(20) enables a plurality of voltage dividing paths selectively by receiving the high voltage as a switching voltage, and outputs voltage dividing result generated by passing the high voltage through the enabled voltage dividing path. A comparison circuit(50) generates a comparison signal by comparing the voltage dividing result with a reference voltage. A clock control circuit(60) generates the pumping clock signal in response to the comparison signal.
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申请公布号 |
KR100764740(B1) |
申请公布日期 |
2007.10.08 |
申请号 |
KR20060043882 |
申请日期 |
2006.05.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BYEON, DAE SEOK;LEE, HEE WON |
分类号 |
G11C16/30 |
主分类号 |
G11C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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