发明名称 FLASH MEMORY DEVICE AND HIGH VOLTAGE GENERATOR FOR THE SAME
摘要 A flash memory device and a high voltage generator for the same are provided to generate a required high voltage stably, by preventing overshoot due to high transient voltage generated from the high voltage generator efficiently. A charge pump(10) generates a high voltage in response to a pumping clock signal. A voltage divider circuit(20) enables a plurality of voltage dividing paths selectively by receiving the high voltage as a switching voltage, and outputs voltage dividing result generated by passing the high voltage through the enabled voltage dividing path. A comparison circuit(50) generates a comparison signal by comparing the voltage dividing result with a reference voltage. A clock control circuit(60) generates the pumping clock signal in response to the comparison signal.
申请公布号 KR100764740(B1) 申请公布日期 2007.10.08
申请号 KR20060043882 申请日期 2006.05.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYEON, DAE SEOK;LEE, HEE WON
分类号 G11C16/30 主分类号 G11C16/30
代理机构 代理人
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