METHODS OF FORMING A SEMICONDUCTOR DEVICE

摘要

A method of forming a semiconductor device is provided to minimize the degradation of characteristics of a first conductive metallic compound layer by restraining the oxygen of the air from penetrating into the first conductive metallic compound layer using a second conductive metallic compound layer formed on the first conductive metallic compound layer. A first conductive metallic compound layer is formed on a substrate by using an organic metal chemical deposition(S320). A second conductive metallic compound layer is formed on the first conductive metallic compound layer by using a PVD(S360). At this time, the first conductive metallic compound layer is airtightly kept. The first conductive metallic compound layer is made of a first metallic nitride layer. The second conductive metallic compound layer is made of a second metallic nitride layer.