INTERCONNECTION AND METHOD FOR FORMING THE SAME

摘要

A metal interconnection and its forming method are provided to reduce the resistance of a metal interconnection by forming contact plugs in various shapes. A first metal interconnection(125) is formed on a substrate(110), and a first barrier metal layer(120) is formed on a sidewall and bottom surface of the first metal interconnection. A first insulating layer(135) is formed to cover the first metal interconnection, and a second metal interconnection(175) is formed on the first insulating layer. A contact plug(171) penetrates the first insulating layer to connect the first and second metal interconnections. A second barrier metal layer(170) is formed on a sidewall and bottom of the contact plug and a sidewall and bottom of the second metal interconnection.