| 摘要 |
An interface roughness alleviating film, an interface roughness alleviating film forming material, a wiring layer and a semiconductor device using the interface roughness alleviating film, and a method for manufacturing the semiconductor device are provided to reduce a power consumption of the semiconductor device by decreasing an amount of a leakage current and obtaining wiring layers with high TDDB property. An interface roughness alleviating film(20) is contacted with an insulation film. A wiring line is contacted with an opposite side of the interface roughness alleviating film. An interface roughness between the insulation film and the interface roughness alleviating film is smaller than the interface roughness between the wiring line and the interface roughness alleviating film. The interface roughness alleviating film is made of a material, which contains silicon chemicals, whose average molecule weight is smaller than 1000. The number of silicon atoms included in one molecule is smaller than 20.
|
