LIGHT EMITTING DEVICE HAVING ZENOR DIODE THEREIN AND METHOD OF FABRICATING THE SAME

摘要

A light emitting device having a zener diode and a manufacturing method thereof are provided to achieve a high output power by employing a silicon substrate with good heat dissipation performance. A P-type silicon substrate(21) has a zener diode region(A) and a light emitting diode region(B). A first N-type compound semiconductor layer(23a) is jointed to the zener diode region of the P-type silicon substrate to exhibit characteristics of a zener diode. A second N-type compound semiconductor layer(23b) is positioned on the light emitting diode region of the P-type silicon substrate, and is spaced apart from the first N-type compound semiconductor layer. A P-type compound semiconductor layer(27) is positioned on the second N-type compound semiconductor layer. An active layer(25) is interposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer. A transparent ZnO electrode layer(29) is formed on the P-type compound semiconductor layer.