| 摘要 |
A vertical type light emitting diode with an electrode layer and a manufacturing method thereof are provided to emit the light having high brightness at uniform distribution by forming a transparent electrode layer with Zn compound on an N-type semiconductor layer. A porous silicon substrate is prepared as a sacrificial substrate. An N-type semiconductor layer(160), an active layer(140) and a P-type semiconductor layer(120) are sequentially deposited on the porous silicon substrate. The porous silicon substrate is removed to expose the N-type semiconductor layer. A conductive reflection layer(122) is formed on the P-type semiconductor layer, and a transparent electrode layer(170) made of Zn compound is formed on the N-type semiconductor layer.
|
