MAGNETIC RANDOM ACCESS MEMORY DEVICE USING CURRENT INDUCED SWITCHING

摘要

A magnetic memory device is provided to reduce a critical current value necessary for the switching of the device by a CID(current induced switching) method. A magnetic memory device includes a lower electrode(21), a magnetic resistive structure and an upper electrode. The magnetic resistive structure is formed on the lower electrode. The magnetic resistive structure includes a free layer capable of changing the widths of two sides opposite to each other. The upper electrode(23) is formed on the magnetic resistive structure. The widths of the two sides opposite to each other become reduced toward a center portion in the free layer. The free layer is formed like an oval type structure.