| 摘要 |
<p>A composite semiconductor device is provided to allow a carrier storage layer to intercept an electric current path of a semiconductor area by an electric field effect. A composite semiconductor device includes a semiconductor area(5), a source electrode(7), a drain electrode(8), a gate unit(12), a Schottky electrode(60), and a connection conductor. The semiconductor area(5) has principal surfaces which face each other. The source electrode(7) and the drain electrode(8) are formed on one side principal surface of the semiconductor area(5). The gate unit(12) is formed on one side principal surface of the semiconductor area(5) and is arranged between the source electrode(7) and the drain electrode(8) to control current flowing between the source electrode(7) and the drain electrode(8). The Schottky electrode(60) is arranged at the opposite side of the source electrode(7) with respect to the gate unit(12) on one side principal surface of the semiconductor area(5) and is connected to one side principal surface of the semiconductor area(5). The connection conductor is connected between the source electrode(7) and the Schottky electrode(60).</p> |
