| 摘要 |
<p>A semiconductor device with an increased channel area and a method for manufacturing the same are provided to improve a characteristic of a transistor by preventing a short channel effect due to high integration. A semiconductor device with an increased channel area includes an active area(100), a gate oxide film(31), and a gate electrode(32). An upper surface(101), both side surfaces(102), and a lower surface(103) of the active area(100) are exposed. The gate oxide film(31) is formed on the exposed surface of the active area(100). The gate electrode(32) of a ring type surrounds the active area(100) by being formed on the gate oxide film(31). The active area(100) is composed of a body surrounded by the gate electrode(32) and a pillar supporting the body.</p> |
