PHASE CHANGE MEMORY DEVICE AND METHOD APPLYING PROGRAM CURRENT THEREOF

摘要

A phase change memory device and a method for applying a program current thereof are provided to reduce unnecessary current consumption when a reset current is applied during a write operation. A memory cell array(110) has a plurality of memory cells. A write driver circuit(140) provides a set current or a reset current to a selected memory cell. The write driver circuit includes a set current driver providing the set current and a reset current driver providing the reset current. According to the write driver, a pulse control part(210) receives one of a set pulse and a reset pulse according to a logic level of input data, and generates a set control signal in response to the input data and the set pulse, and generates a reset control signal in response to the input data and the reset pulse. A set current control part(220) operates in response to the set control signal, and controls the intensity of the set current in response to a set DC voltage. A reset current control part(240) operates in response to the reset control signal, and controls the intensity of the reset current in response to a reset DC voltage.