| 摘要 |
A nitride semiconductor device is provided to prevent degradation of the reunion efficiency due to the piezoelectric effect inducing spontaneous polarization, thereby improving the quantum well structure. A nitride semiconductor device includes a p-type nitride layer(32), an n-type nitride layer(37), and an active layer(35). The active layer(35) is formed between the p-type nitride layer(32) and the n-type nitride layer(37), and has a plurality of quantum well layers(35b) and at least one quantum barrier layer(35a) alternatively laminated. The active layer(35) has a polarization buffer layer(35c) formed between the quantum well layers(35b) and the quantum barrier layers(35a), and includes a band gap between the band gap of the quantum well layers(35b) and the band gap of the quantum barrier layers(35a).
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