| 摘要 |
A method for manufacturing a semiconductor device is provided to improve the operation reliability of the semiconductor device by reducing an amount of a noise which is generated between adjacent lines. A metal line(22) is formed on a semiconductor substrate. A multilayer interlayer dielectric(23), which includes a low-dielectric oxide film, is formed on the metal layer. A metal hard mask is formed on the interlayer dielectric. A photo-sensitive pattern is formed on the metal hard mask. The metal hard mask is etched by using the photo-sensitive pattern as an etching mask. The photo-sensitive pattern is removed from the semiconductor substrate. The interlayer dielectric is etched by using the metal hard mask as the etching mask and forms a contact hole formed by etching the interlayer dielectric.
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