| 摘要 |
<p>A semiconductor device and its manufacturing method are provided to increase the area of an active region and to enhance a current driving capability of transistors of cell and peripheral regions by forming a barrier layer in an isolation layer, exposing selectively a semiconductor substrate through a recess of the isolation layer and growing an SEG(Selective Epitaxial Growth) layer. A semiconductor device includes a first isolation layer(105) for defining a first active region(100), a second isolation layer, a line type barrier layer, and a recessed gate. The second isolation layer(130) is used for defining a second active region(125). The second active region is overlapped with the first isolation layer. The line type barrier layer(120) is formed in the isolation region between the first and the second active regions. The recessed gate is formed vertical to the first and the second active regions. The second active region is formed on the first isolation layer by using an SEG layer.</p> |
