SEMICONDUCTOR, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR LIGHT-EMITTING DIODE

摘要

A method for manufacturing a semiconductor structure is provided to deposit a low-defect semiconductor layer by lowering a penetration potential on a convex portion formed in a horizontal plane. A semiconductor structure includes a substrate(100) with a recessed portion, and a semiconductor layer(300) formed on the substrate. The recessed portion has a convex portion(110a) formed in a horizontal plane and a concave portion(110b) formed in a slant plane or round shape. The recessed portion is formed by wet etching. The semiconductor layer has an epitaxial layer grown in a vertical direction to the convex portion and in a horizontal direction across the concave portion.