SCHOTTKY DIODE HAVING LOW BREAKDOWN VOLTAGE AND METHOD FOR FABRICATING THE SAME

摘要

A schottky diode having a low breakdown voltage is provided to improve the reliability and to extend the lifetime by preventing an excessive voltage from being applied into a circuit of an RFID tag. A schottky diode with a low breakdown voltage includes a silicon substrate, an insulating layer, an N+ doping layer, an N- doping layer, a cathode electrode and an anode electrode. The silicon substrate is composed of a P type substrate(31) and an N type well(32) on the P type substrate. The insulating layer encloses the N type well to separate electrically the N type well from the P type substrate. The N+ doping layer(36) is locally formed at one portion of an upper surface of the N type well. The N- doping layer(40) is locally formed at the other portion of the upper surface of the N type well. The cathode electrode(33) is formed on the N+ doping layer. The anode electrode(34) is formed on the N- doping layer.